Hydrogenated Amorphous Carbon Nitride Films with Controlled Hydrogen Densities - Application to Electric Field Emission Devices

摘要

Hydrogenated amorphous carbon nitride films which presumably include oxygen atoms (α-CN{sub}x:(O):H) were prepared by the electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) of mixed gases of He, BrCN, and H{sub}2O. The partial pressures of He and BrCN were 3 and 2 mTorr, respectively. The relative number density of the hydrogen atoms was varied by controlling the partial pressure of H{sub}2O (P{sub}(H{sub}2O)) in the range of 0.0-0.6 mTorr. The films were coated by ECRCVD onto Al-doped ZnO (ZnO:Al) single crystal whiskers, which were prepared by atmospheric CVD with the reactants of Zn(C{sub}5H{sub}7O{sub}2){sub}2 and Al(C{sub}5H{sub}7O{sub}2){sub}3 to manufacture cold cathode devices. The I-V characteristics of the devices were confirmed to be the Fowler-Nordheim type, and the work functions were determined to be 4.7±0.4, 2.3+0.1, 2.0±0.1, and 1.9±0.1 eV under the conditions of P{sub}(H{sub}2O) values of 0.0, 0.2, 0.4, and 0.6 mTorr, respectively.