STRUCTURE AND CRYSTALLOGRAPHIC ORIENTATION OF ALUMINUM FILMS ON n- AND p-SILICON IN THE Al - Ti - Si AND Al - Ti - SiO_x - Si SYSTEMS

摘要

The structure and crystallographic orientation of aluminum films in the Al - Ti - Si and Al - Ti - SiO_x-Si systems is studied with the use of electron microscopic, electron diffraction, and x-ray methods and thermodynamic analysis. The role of barrier layers formed by Ti and by the "Ti - SiO_x low-temperature oxide" composition in the formation and orientation of aluminum grains is determined.The physicochemical properties of materials used in electronic engineering determine the main operating parameters of the functional layers, elements, components, and articles as a whole. As a rule, the used materials with the exception of conductors have a polycrystalline structures. The crystallites can possess prevalent orientations (texture) depending on the conditions of formation of functional layers, which results in anisotropy of the physicochemical properties.