A Sub-1 V Bandgap Reference Based on Different Threshold MOSFETs Under 40 nm Process

摘要

Based on different threshold MOSFETs in 40 nm CMOS process, a sub-1 V low-power bandgap voltage reference with second-order temperature compensation is designed. The reference generator employs the characteristics of the difference between gate and source voltages (ΔV_(GS)) of a high threshold NMOS transistor operating in the subthreshold region and a normal threshold NMOS transistor operating in the saturation region to achieve second-order temperature compensation. Simulation results show that a temperature coefficient of 2.3 ppm/℃ at 0.9 V is achieved from -40 ℃ to 85 ℃, and the reference generator operates under supply voltage ranging from 0.9 to 1.5 V with a power consumption lower than 1.2 μW.