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Wire Sweep Characterization in System-in-Package (SiP) Component with Au Wire Bonding During Epoxy Molding Compounds Molding Process

机译:环氧模塑料成型过程中具有金线键合的系统级封装(SiP)组件的扫线特性

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摘要

We focused failure analysis of a System-in-Package (SiP) component including wire sweep and epoxy molding compounds (EMC) molding flow during the molding process. The SiP component was assembled by flip-chip and wire bonding with 0.7 mil diameter on a substrate with EMC. Two Si devices were used, one of which was bonded using ball grid array (BGA) solder balls, and underfill process was then performed to fill the gap between the Si device and the substrate after joining. The other Si device was wire-bonded on the substrate using Au wire. However, wire sweep and wire lift happened during EMC molding process. To reduce the wire sweep and wire lift, we changed the bonding structure of stitch-bonded Au wire to the double bonding. As a result, wire lift did not occur and the wire sweep reduced.
机译:我们重点研究了模制过程中的系统级封装(SiP)组件的故障分析,包括线扫和环氧模塑料(EMC)模制流程。 SiP组件通过倒装芯片和直径0.7密耳的引线键合在具有EMC的基板上进行组装。使用了两个Si器件,其中一个是使用球栅阵列(BGA)焊球键合的,然后进行底部填充工艺以填充接合后的Si器件与基板之间的间隙。使用Au线将另一个Si器件丝焊在衬底上。但是,在EMC成型过程中发生了扫线和提线。为了减少导线扫掠和导线提起,我们将针脚接合金线的接合结构更改为双键接合。结果,丝线未发生提起,丝线扫掠减小。

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