Fabricated ZnO Nanorods on Transparent Conductive Ga-Doped ZnO Film as Photoanodes Applying for Dye-Sensitized Solar Cell

摘要

In this study, photoanodes using well-aligned ZnO nanorods on transparent conductive gallium doped ZnO film were investigated for application in dye-sensitized solar cell. In order to choose the most suitable conductive substrate for photoanodes, thickness effects on electrical, optical and structural properties of gallium doped ZnO films were investigated. The lowest resistivity (3.96 x 10(-4) Omega.cm) and the highest hall mobility (14.12 cm(2)/(V.s)) were obtained from 300 nm-thick gallium doped ZnO film. ZnO nanorods were fabricated on the obtained gallium doped ZnO films by recrystallization of reduced ZnO film with the multi-annealing method. It was found that the vertical alignment of ZnO nanorods was dependent on the growth orientation of ZnO film on GZO film. A high transmittance of 70% was obtained from ZnO nanorods on 300 nm-thick gallium doped ZnO film. The demonstrated dye-sensitized solar cell showed an overall conversion efficiency of 3.19% with a fill factor of 0.62.