Characteristics of Nanocrystalline Si:H Films Made by Inductively Coupled Plasma with Low-Inductance Antenna

摘要

P-type hydrogenated nanocrystalline silicon (nc-Si:H) thin films are prepared on a glass substrate by an inductively coupled plasma chemical vapor deposition system using multiple internal low inductance antenna units. The deposition rate of the nc-Si:H films increases with working pressure but appears unaffected by substrate temperature. Both C-H and R ratio increase monotonically with working pressure and substrate temperature. The XRR density, GIXRD grain size, X-c and electrical conductivity all consistently increase with substrate temperature; but increase with working pressure up to 10 mTorr, and then decrease upon further increase of working pressure. The former is attributed to the higher adatom energy at higher substrate temperature, while the latter can be explained by considering plasma density and the mean free path of plasma particles.