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首页> 外文期刊>Nanotechnology >Domain populations in lead zirconate titanate thin films of different compositions via piezoresponse force microscopy
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Domain populations in lead zirconate titanate thin films of different compositions via piezoresponse force microscopy

机译:压电响应力显微镜观察不同组成的锆钛酸铅钛薄膜中的畴群

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摘要

Pb(Zr_x-Ti_(1-x))O_3 (PZT) thin films with (111) texture were deposited onto commercially available Pt/Ti/SiO_2/Si substrates via the sol-gel technique. Piezoforce microscopy (PFM) was then used to analyse the evolution of domain populations as a function of the Zr content x. Domain structures of virgin films, local piezoelectric properties of individual grains and piezoelectric histograms were studied in films with different compositions (x = 0.2-0.6), which cover both the tetragonal and rhombohedral sides of the phase diagram. In films with low Zr content mainly single-domain grains were observed. As the Zr content increased, a larger fraction of polydomain grains was found. The local piezoelectric response measured inside sufficiently big grains indicated that the strongest piezoelectric effect occurs in PZT30/70 (x = 0.3) films. This was attributed to two different effects: high out-of-plane polarization achieved due to the (111) texture and influence of the dielectric constant. In tetragonal films with their lower dielectric constants the electric field seen by a ferroelectric is higher as compared to other compositions, giving rise to an apparent increase of the effective piezoelectric response measured by PFM. The analysis of the domain images indicated that sol-gel derived PZT films are slightly self-polarized near the free surface. With increasing Zr/Ti ratio, the variation of domain populations resulted in reversing the sign of the average piezoelectric response at x ≈ 0.3. It is demonstrated that PFM histograms are extremely sensitive to PZT composition and can be used as a signature of complex domain structures in ferroelectric thin films.
机译:通过溶胶-凝胶技术将具有(111)织构的Pb(Zr_x-Ti_(1-x))O_3(PZT)薄膜沉积到市售Pt / Ti / SiO_2 / Si衬底上。然后使用压电显微镜(PFM)分析作为Zr含量x的函数的结构域种群的演变。在具有不同组成(x = 0.2-0.6)的薄膜中研究了原始薄膜的畴结构,单个晶粒的局部压电特性和压电直方图,这些薄膜覆盖了相图的四边形和菱形面。在低Zr含量的薄膜中,主要观察到单畴晶粒。随着Zr含量的增加,发现了更大比例的多畴晶粒。在足够大的晶粒内部测得的局部压电响应表明,最强的压电效应出现在PZT30 / 70(x = 0.3)薄膜中。这归因于两种不同的影响:由于(111)纹理和介电常数的影响,实现了高面外极化。在具有较低介电常数的四边形薄膜中,铁电体所见的电场比其他组合物要高,从而导致通过PFM测量的有效压电响应明显增加。对畴图像的分析表明,溶胶-凝胶衍生的PZT膜在自由表面附近略微自极化。随着Zr / Ti比的增加,畴的变化导致x≈​​0.3时平均压电响应的符号反转。事实证明,PFM直方图对PZT成分极为敏感,可以用作铁电薄膜中复杂畴结构的特征。

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