PRODUCTION OF THIN FILM OF LEAD TITANATE OR LEAD TITANATE ZIRCONATE

摘要

PURPOSE: To produce a thin film having good crystallinity lesser carbon content and good quality even at the time of using a compartively lower substrate temp. by employing specific starting material compounds and performing the chemical vapor deposition of the thin film in an oxidizing gas atmosphere while irradiating the substrate of the thin film with an electromagnetic wave. ;CONSTITUTION: In the MOCVD method (metal organic chemical vapor deposition method) of this thin film, each of organometallic materials 6 including Pb(C₁₁H₁₉O₂)₂ or (C₂H₅)₃Pb(OC₅ H₁₁O) as the Pb starting material and Ti(O-iC₃H₇)₄ as the Ti starting material, etc., is heated in one of the thermostatic baths 4 to a temp. at which the organometallic compound shows an adequate vapor pressure and then carried to the film formation chamber 8 with the inert gas 1 while controlling the flow rate by one of the mass flow controllers 3. The substrate 9 in the film formation chamber 8 is heated with the heater 11 and the pressure of the chamber 8 is adjusted to 0.1Torr to atmospheric pressure. The carried organometallic vapors are allowed to react on the substrate 9 with an oxidizing gas supplied from the oxidizing gas bomb 2 to grow a film. At this time, the substrate 9 is irradiated through a window of the film formation chamber 8 with the electromagnetic wave 7 having its peak intensity in the wavelength region of ≤250nm to produce the objective thin film of lead titanate or lead titanate zirconate.;COPYRIGHT: (C)1995,JPO