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Self-modulated taper drawing of silica nanowires

机译:二氧化硅纳米线的自调制锥度图

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摘要

We report a self-modulated taper-drawing process for fabricating silica nanowires with diameters down to 20 nm. Long amorphous silica nanowires obtained with this top-down approach present extraordinary uniformities that have not been achieved by any other means. The measured sidewall roughness of the wires goes down to the intrinsic value of 0.2 nm, along with a diameter uniformity better than 0.1 percent. The wires also show high strength and pliability for patterning under optical microscopes. The ability to prepare and manipulate highly uniform silica nanowires may open up new opportunities for studying and using low-dimensional silica material on a nanometre scale.
机译:我们报告了一种自调制锥度拉伸工艺,用于制造直径低至20 nm的二氧化硅纳米线。通过这种自上而下的方法获得的长非晶硅纳米线呈现出非凡的均匀性,这是其他任何方式都无法实现的。测得的导线侧壁粗糙度降至0.2 nm的固有值,且直径均匀性优于0.1%。这些线材还显示出高强度和柔韧性,可在光学显微镜下进行构图。制备和操纵高度均匀的二氧化硅纳米线的能力可能为研究和使用纳米尺度的低维二氧化硅材料开辟新的机会。

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