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Electrical resistance: an atomistic view

机译:电阻:原子观

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This tutorial article presents a 'bottom-up' view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remarkably, no serious quantum mechanics is needed to understand electrical conduction through something really small, except for unusual things like the Kondo effect that are seen only for a special range of parameters. This article starts with energy level diagrams (section 2), shows that the broadening that accompanies coupling limits the conductance to a maximum of q~2 / h per level (sections 3, 4), describes how a change in the shape of the self-consistent potential profile can turn a symmetric current-voltage characteristic into a rectifying one (sections 5, 6), shows that many interesting effects in molecular electronics can be understood in terms of a simple model (section 7), introduces the non-equilibrium Green function (NEGF) formalism as a sophisticated version of this simple model with ordinary numbers replaced by appropriate matrices (section 8) and ends with a personal view of unsolved problems in the field of nanoscale electron transport (section 9). Appendix A discusses the Coulomb blockade regime of transport, while appendix B presents a formal derivation of the NEGF equations. MATLAB codes for numerical examples are listed in appendix C. (The appendices are available in the online version only.)
机译:本教程文章介绍了电阻的“自底向上”视图,从很小的东西(如分子)开始,然后讨论了当我们使用更大的导体时出现的问题。值得注意的是,除了像Kondo效应这样的异常现象(仅在特定范围的参数中才能看到)之外,不需要真正的量子力学来了解通过很小的东西的电导。本文从能级图开始(第2节),它表明伴随耦合的展宽将电导限制为每级最大q〜2 / h(第3、4节),描述了自我形状的变化-一致的电位分布可以将对称的电流-电压特性转变为整流特性(第5、6节),表明可以通过简单模型(第7节)理解分子电子学中的许多有趣效应,引入了非平衡格林函数(NEGF)形式主义是该简单模型的复杂版本,其中普通数字已由适当的矩阵替换(第8节),并以个人观点看待纳米级电子传输领域中尚未解决的问题(第9节)。附录A讨论了库仑运输的封锁机制,而附录B给出了NEGF方程的形式推导。附录C中列出了用于数值示例的MATLAB代码。(这些附录仅在在线版本中可用。)

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