原子氧对石墨烯膜电阻的影响

摘要

通过对石墨烯膜在原子氧辐照下电阻变化研究,并结合原子氧辐照前后石墨烯膜表面微观形貌分析,发现石墨烯膜会被原子氧剥蚀,膜厚逐渐减小直至完全剥蚀.石墨烯膜的电阻在原子氧辐照初期有所下降,之后开始上升.说明在原子氧辐照初期有石墨烯吸附氧原子的现象,在后期石墨烯膜电性能变化符合电阻定律.利用石墨烯剥蚀厚度或者石墨烯电阻变化数据两种方法都可以得到石墨烯膜剥蚀率,约为(1.2～1.3)×10-25 cm3/atom.根据石墨烯膜电阻随原子氧注量的关系,提出一种新的原子氧探测器.%The resistance and the surface morphology of the graphene films were studied after atomic oxygen exposure.The graphene films can be etched away during atomic oxygen exposure,the resistance of graphene films decreases at first and then increases.It shows that the adsorption of oxygen atom may play an important role in the change of the resistance of graphene films at the beginning of the exposure and then the change of the resistance conforms to the law of resistance.The atomic oxygen erosion rate which is about 1.2×10-25cm3/atom to 1.3×10-25cm3/atom can be obtained.A kind of new atomic oxygen detector was put forward based on the relationship between the resistance of graphene films and atomic oxygen fluence.