Degradation pattern of SnO_2 nanowire field effect transistors

摘要

The degradation pattern of SnO_2 nanowire field effect transistors (FETs) was investigated by using an individual SnO_2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al_2O_3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R _s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.