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Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes

机译:大规模图案化多层石墨烯薄膜作为GaN发光二极管的透明导电电极

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摘要

This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes. MLG films were synthesized using a chemical vapor deposition (CVD) technique on nickel films and showed typical CVD-synthesized MLG film properties, possessing a sheet resistance of similar to 620 Omega/square with a transparency of more than 85% in the 400-800 nm wavelength range. The MLG was applied as the transparent conducting electrodes of GaN-based blue LEDs, and the light output performance was compared to that of conventional GaN LEDs with indium tin oxide electrodes. Our results present a potential development toward future practical application of graphene electrodes in optoelectronic devices.
机译:这项工作演示了大规模批量制造具有图案化的多层石墨烯(MLG)作为透明导电电极的GaN发光二极管(LED)。使用化学气相沉积(CVD)技术在镍膜上合成MLG膜,并显示出典型的CVD合成的MLG膜性能,其薄层电阻类似于620Ω/平方,在400-800中的透明度大于85% nm波长范围。将MLG用作GaN基蓝色LED的透明导电电极,并将其光输出性能与具有铟锡氧化物电极的常规GaN LED的光输出性能进行了比较。我们的结果提出了石墨烯电极在光电器件中未来实际应用的潜在发展。

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