TRANSPARENT ELECTRODE STRUCTURE, NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE, AND TRANSPARENT ELECTRODE FILM FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a transparent electrode structure capable of increasing light transmittance and attaining high ohmic characteristics by reducing energy difference in Schottky barrier between the transparent electrode structure and a GaN layer.;SOLUTION: There is provided a transparent electrode structure comprising a GaN layer, an Ni thin film laminated on the GaN layer and having a thickness of 0.5 nm to 1.5 nm, and a transparent conductive film laminated on the Ni thin film. In this case, a deposition rate of the Ni thin film is set to be lower than a deposition rate of the transparent conductive film.;COPYRIGHT: (C)2014,JPO&INPIT