Synthesis of Graphene Films by Chemical Vapor Deposition for Transparent Conducting Electrodes of GaN Light-Emitting Diodes

摘要

This work demonstrates large-scale simultaneous fabrication of patterned graphene-based GaN light-emitting diodes (LEDs). Graphene sheets were synthesized using a chemical vapor deposition (CVD) technique on nickel films and showed typical CVD-synthesized film properties, possessing a sheet resistance of approx620 OMEGA/square with a transparency of more than 85percent in the 400-800 nm wavelength range, and was applied as transparent conducting electrodes of GaN-based blue LEDs. The light output performance of GaN LEDs with graphene electrodes was comparable to that of conventional ITO-electrode LEDs over the range of input current up to 150 mA.