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Photoresponse of SnO_2 nanobelts grown in situ on interdigital electrodes

机译:叉指电极上原位生长的SnO_2纳米带的光响应

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摘要

The photoresponses of SnO_2 nanobelts grown in situ among interdigital electrodes on silicon substrates were investigated under ultraviolet (UV) light and green laser illumination. The current increased to approx 140 nA in vacuum under green laser irradiation with a power of 35.1 mW. Under UV illumination, however, the source-drain current increased to approx 80 mu A in air and up to approx 900 mu A in vacuum, respectively. The UV photoresponse was a result of electron transition from the valence band to the conduction band, while the green laser photoresponse was dependent on oxygen pressure, ambient temperature and defect levels.
机译:在紫外(UV)光和绿色激光照射下,研究了硅衬底上叉指电极间原位生长的SnO_2纳米带的光响应。在绿色激光照射下,功率为35.1 mW,真空中的电流增加到约140 nA。然而,在紫外线照射下,源极-漏极电流在空气中分别增加到大约80μA,在真空中增加到大约900μA。紫外光响应是电子从价带跃迁到导带的结果,而绿色激光光响应则取决于氧气压力,环境温度和缺陷水平。

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