Fabrication and field emission properties of a ZnO nanowire (NW) triode were investigated in this study. The ZnO NWs have a single-crystalline wurtzite structure, approx 50 nm diameter and 3.4 X 10~(10) cm~(-2) number density. The ZnO NW triode shows good and controllable emission properties with the turn-on anode electric field (at a current density of 1 mu A cm~(-2)), threshold anode electric field (at a current density of 1 mA cm~(-2)) and field enhancement factor of 1.6, 2.1 V mu m~(-1) and 3340, respectively. The ZnO NW triode exhibits transistor characteristics with a gate leakage region, linear region and saturation region. Furthermore, the controllable field emission performance of the ZnO NW triode can be enhanced by illumination and argon ion bombardment. A low temperature Si-based microelectronic compatible fabrication process was provided for successfully making ZnO NW based triodes with good field emission properties.
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机译：在这项研究中研究了ZnO纳米线（NW）三极管的制造和场发射特性。 ZnO NW具有单晶纤锌矿结构，直径约50 nm，数密度为3.4 X 10〜（10）cm〜（-2）。 ZnO NW三极管在阳极电场导通（电流密度为1μAcm〜（-2）），阈值阳极电场（电流密度为1 mA cm〜（）时显示出良好且可控的发射特性-2））和场增强因子分别为1.6、2.1 Vμm〜（-1）和3340。 ZnO NW三极管表现出具有栅漏区，线性区和饱和区的晶体管特性。此外，可以通过照明和氩离子轰击来增强ZnO NW三极管的可控场发射性能。提供了一种基于低温Si的微电子兼容制造工艺，以成功制造具有良好场发射特性的ZnO NW基三极管。
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