Emitting a-SiOx(Er) films and a-SiOx(Er)/a-Si : H microcavities doped with Er by remote magnetron sputtering technique

摘要

We have developed the technique of growing amorphous a-SiOx (Er) films and a-SiOx (Er)/a-Si:H multilayer structures based on spatially separating the processes of the decomposition of an oxygen -silane gas mixture in an rf glow discharge plasma and remote magnetron sputtering of an Er target. This approach allows us to control independently the film deposition rate, the Er-ion concentration and its depth distribution in the film. Time-resolved photoluminescence measurements have shown that films and planar microcavities with an Er-doped active layer exhibit internal quantum efficiency for Er ion emission of similar to 75%. The method that we suggest is a way of producing effectively emitting microcavity structures, in which the distribution profile of emission centers coincides with that of the electromagnetic field in individual layers of the structure.