Gate-controlled rectifying barrier in a two-dimensional hole gas

摘要

The current flowing in a homogeneous low-dimensional conductor is shown to be rectified by a gate-controlled asymmetric barrier resembling a Schottky barrier. The barrier shape is set by varying the potential along a nanofabricated nonequipotential gate which allows simple external control over the device function independent of material properties. A forward-to-reverse current ratio of more than 10(4) is obtained. The merits of diodes fabricated in this way with respect to conventional diodes are discussed.