Magnetotransport Properties and Subband Structure of the Two-Dimensional Hole Gas in GaAs-Ga(1-x)A1xAs Heterostructures

摘要

Systematic magnetotransport measurements of two-dimensional holes in various GaAs-Ga1-xA1xAs heterostructures are reported. The behavior of a heterojunction and a 200-A quantum well can be explained on the basis of zero-field spin-split subbands, whereas that of a 100-A quantum well is consistent with a spin-degenerate ground subband in the absence of a magnetic field. However, in a 50-A quantum well we found an unusual relation between the filling factor and the spin splitting.