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Patterned micropads made of copper nanowires on silicon substrate for application as chip to substrate interconnects

机译:硅基板上由铜纳米线制成的图案化微焊盘,可用作芯片到基板的互连

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摘要

Patterned micropads made of metallic nanowires, 50 mu m in diameter, are fabricated on a silicon substrate. An aluminium film patterned with SiO_2 is anodized to fabricate a patterned nanoporous alumina (PNA) template in which metallic nanowires are electrodeposited. SiO_2 that is deposited using the plasma-enhanced chemical vapour deposition process is demonstrated to be an effective barrier to anodization for the fabrication of high aspect ratio PNA templates. Current-voltage characteristics of an individual copper nanowire micropad display ohmic behaviour with a low resistance value of 5.5 m OMEGA. The nanowires are able to withstand the solder reflow process. Cu nanowire/Sn solder reflow reaction leads to Cu_6Sn_5 intermetallic formation. These micropads made of metallic nanowires have the potential for application as chip to substrate interconnects. Nanostructure synthesis is carried out using standard microelectronics fabrication techniques that would enable easy integration of such nanodevices into routine silicon manufacturing.
机译:由直径为50微米的金属纳米线制成的图案化微焊盘被制造在硅基板上。对用SiO_2图案化的铝膜进行阳极化处理,以制造出图案化的纳米孔氧化铝(PNA)模板,在该模板中电沉积金属纳米线。使用等离子增强化学气相沉积工艺沉积的SiO_2被证明是阳极氧化对高纵横比PNA模板制造的有效屏障。单个铜纳米线微焊盘的电流-电压特性显示欧姆特性,其欧姆电阻为5.5 m。纳米线能够承受焊料回流过程。 Cu纳米线/ Sn焊料的回流反应导致形成Cu_6Sn_5金属间化合物。这些由金属纳米线制成的微焊盘具有作为芯片到基板互连的应用潜力。纳米结构合成是使用标准的微电子制造技术进行的,该技术可以使此类纳米器件轻松集成到常规的硅制造中。

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