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首页> 外文期刊>Nano LIFE >ELECTRONIC, MAGNETIC, AND MECHANICAL PROPERTIES OF LINE-DEFECT EMBEDDED GRAPHENE NANORIBBONS: A FIRST-PRINCIPLES STUDY
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ELECTRONIC, MAGNETIC, AND MECHANICAL PROPERTIES OF LINE-DEFECT EMBEDDED GRAPHENE NANORIBBONS: A FIRST-PRINCIPLES STUDY

机译:线缺陷嵌入式石墨烯纳米电子的电子,磁性和机械性质:第一性原理研究

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摘要

We use first-principles method to investigate the electronic, magnetic, and mechanical properties of graphene nanoribbons (GNRs) with extended line defec?. Particular attention has been placed on zigzag GNR with 5-8-5 line defect and armchair GNR with 4-8 line defect. The resul?s show that the band gaps of GNRs can be effectively tuned by line defect, which depend on both their widths and the position of defect. The line-defect embedded GNRs are either metals or semiconductor with markedly reduced band gap. The band-gap reduction is attributed to the defect-induced impurity states. In particular, the metallic line-defect embedded zigzag GNRs are ferromagnetic at ground state, while those semiconducting ones are antiferromagnetic. Upon the line-defect embedded armchair GNRs, the band gaps vary periodically with the increasing widths. Our results imply the potential applications of line-defect embedded GNRs at nanoscale electronics.
机译:我们使用第一原理方法研究具有扩展线定义的石墨烯纳米带(GNR)的电子,磁性和机械性能。特别关注具有5-8-5线缺陷的曲折GNR和具有4-8线缺陷的扶手椅GNR。结果表明,GNR的带隙可以通过线缺陷有效地调谐,线缺陷取决于它们的宽度和缺陷位置。嵌有线缺陷的GNR是金属或带隙明显减小的半导体。带隙的减少归因于由缺陷引起的杂质状态。特别是,金属线缺陷嵌入的之字形GNR在基态为铁磁性,而那些半导体的反铁磁性则为反铁磁性。在线缺陷嵌入式扶手椅GNR上,带隙随宽度的增加而周期性变化。我们的结果暗示了线缺陷嵌入式GNR在纳米级电子产品中的潜在应用。

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