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A First-principles Study on the Strain-induced Localized Electronic Properties of Dumbbell-shape Graphene Nanoribbon for Highly Sensitive Strain Sensors

机译:高灵敏度应变传感器的哑铃形石墨烯纳米带应变诱导的局部电子性质的第一性原理研究

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The electronic properties of graphene nanoribbons (GNRs) have a function of the ribbon width. It can vary from metallic-like ones to semiconductive-like ones when the width of single GNR is changed. Therefore, the novel structure of GNRs called dumbbell-shape GNR (DS-GNR) was proposed to achieve the development of highly sensitive, reliable, and deformable strain sensors. The DS-GNR consists of one long narrow GNR coalesced by two wide segments of GNRs at its both ends. The wide segments of the original DSGNR possess the metallic-like electronic properties and the narrow segment of the original DS-GNR has the semiconductive-like electronic properties. In this study, the strain-induced change of the electronic band structure of DSGNR was analyzed by using the first-principles calculations. The range of the applied uniaxial tensile strain on DS-GNR was from 0% to 10%. When the length of the narrow segment of DSGNR is longer than 4.3 nm, the effective bandgap located in the narrow segment changes obviously with the change of applied strain. The result indicates that the piezoresistive effect appears in the narrow segment of DS-GNR, and thus high strain sensitivity of its resistivity can be applied to strain sensors.
机译:石墨烯纳米带(GNR)的电子特性具有带宽度的函数。当单个GNR的宽度改变时,它可以从金属类改变为半导体类。因此,提出了一种新颖的GNR结构,称为哑铃形GNR(DS-GNR),以实现高度灵敏,可靠且可变形的应变传感器的开发。 DS-GNR由一个长而窄的GNR组成,该NNR在两端由两个宽段的GNR合并而成。原始DSGNR的宽段具有类似金属的电子特性,原始DS-GNR的窄段具有类似半导体的电子特性。在这项研究中,通过使用第一性原理计算来分析应变引起的DSGNR电子能带结构的变化。在DS-GNR上施加的单轴拉伸应变范围为0%至10%。当DSGNR窄段的长度大于4.3 nm时,位于窄段的有效带隙随施加应变的变化而明显变化。结果表明,压阻效应出现在DS-GNR的狭窄部分,因此其电阻率的高应变敏感性可应用于应变传感器。

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