Piezoelectric gated ZnO nanowire diode studied by in situ TEM probing

摘要

The piezoelectricity of ZnO nanowires has shown rising interests during the last few years and fields such as piezotronics and piezophotonics are emerging with a number of applications and devices. One such device is the piezoelectric gated ZnO nanowire diode, where the p-n junction is replaced by a dynamically created potential barrier created simply by bending the otherwise homogeneously doped nanowire. To further study this type of diode we used in situ transmission electron microscope (TEM) probing, where one electrode was fixed at the end of a ZnO nanowire and another moveable electrode was used both for bending and contacting the wire. Thereby we were able to further characterise this diode and found that the diode characteristics depended on whether the contact was made to the stretched (p-type) surface or to the compressed (n-type) surface of the wire. When the neutral line of the wire contacted, between the stretched and the compressed side, the I-V characteristics were independent on the current direction. The performance of the diodes upon different bending intensity showed a rectifying ratio up to the high value of 60:1. The diode ideality factor was found to be about 5. Moreover, the reverse breakdown voltages of the diode were measured and a local but permanent damage to the diode action was found when the voltage went over the reverse breakdown voltage.