2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET

摘要

In this paper, a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is named as "center-channel (CC) double-gate (DG) MOSFET," is proposed. Device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which produces a self-consistent solution of Poisson-Schrodinger equations and the current continuity equation. The CC operation of CC-NMOS is confirmed from the electron density distribution and the band lineups as well as the lowest energy wave function. Current-voltage characteristics including the trans-conductance (G(m)) of CC-MOSFET are carefully compared with those of the conventional DG-NMOS to evaluate the distinct feature of the proposed FET structure. Our simulation revealed that the proposed FET demonstrates the enhanced (about (similar to 1.6x) current drive and 60% G(m). Finally, the short-channel effects of CC and DG MOSFET, both of which demonstrate excellent subthreshold behaviors and open the possibility of device scaling down to sub-20 nm.