A New Positive Resist Based on Poly(4-Hydroxystyrene) for KrF Excimer Laser Lithography

Kim I.; Park S.J.

首页> 外文期刊>Molecular Crystals and Liquid Crystals Science and Technology, Section A. Molecular Crystals and Liquid Crystals >A New Positive Resist Based on Poly(4-Hydroxystyrene) for KrF Excimer Laser Lithography

【24h】

A New Positive Resist Based on Poly(4-Hydroxystyrene) for KrF Excimer Laser Lithography

机译：基于聚（4-羟基苯乙烯）的KrF准分子激光光刻正胶

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A positive acrylic silicon containing polymer was synthesized with 1 ,3-bis(trimethylsilyl)iso-propyl methacrylate (BPMA) and 4-hydroxy styrene (4-HST) for KrF lithography. Lithographic evaluation shows the capability of 0.2 #mu#m line and space with 2 wt percent PAG concentration.

机译：用1,3-双（三甲基甲硅烷基）甲基丙烯酸异丙酯（BPMA）和4-羟基苯乙烯（4-HST）合成了一种正丙烯酸含硅聚合物，用于KrF光刻。光刻评估显示，PAG浓度为2 wt％时，线和空间的能力为0.2＃μm。

著录项

来源
《Molecular Crystals and Liquid Crystals Science and Technology, Section A. Molecular Crystals and Liquid Crystals》 |2000年第0期|共4页
作者
Kim I.; Park S.J.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类晶体学;晶体学;人造石及其他胶凝材料;
关键词
KrF lithography; photoresist; etch resistance;

机译：KrF光刻;光刻胶;耐蚀性;

相似文献

外文文献
中文文献
专利

1. A New Positive Resist Based on Poly(4-Hydroxystyrene) for KrF Excimer Laser Lithography [J] . Kim I., Park S.J. Molecular Crystals and Liquid Crystals Science and Technology, Section A. Molecular Crystals and Liquid Crystals . 2000,第0期

机译：基于聚（4-羟基苯乙烯）的KrF准分子激光光刻正胶
2. Poly (#alpha#-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography: (2) F_2 Excimer Laser Exposure Characteristics [J] . Shinji Kishimura, Masaru Sasago, Masamitsu Shirai, Journal of Photopolymer Science and Technology . 2000,第3期

机译：用于VUV光刻的基于聚（＃alpha＃-甲基-对羟基苯乙烯-甲基丙烯酸丙烯腈）的单层光刻胶：（2）F_2受激准分子激光曝光特性
3. Poly (#alpha#-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography: (2) F_2 Excimer Laser Exposure Characteristics [J] . Shinji Kishimura, Masaru Sasago, Masamitsu Shirai, Journal of Photopolymer Science and Technology . 2000,第3期

机译：用于VUV光刻的基于聚（＃alpha＃-甲基-对羟基苯乙烯-甲基丙烯酸丙烯腈）的单层光刻胶：（2）F_2受激准分子激光曝光特性
4. KrF excimer laser lithography with high sensitivity positive resist and high power laser [C] . Tani, Y., Sasago, . 1990

机译：具有高灵敏度正性抗蚀剂和大功率激光的KrF准分子激光光刻
5. Precision excimer laser lithography for cylindrical substrates with thick photoresists. [D] . Cole, Robert L. 2004

机译：精密准分子激光光刻技术，用于带有厚光刻胶的圆柱形基板。
6. Preparation of periodic surface structures on doped poly(methyl metacrylate) films by irradiation with KrF excimer laser [O] . Yevgeniya Kalachyova, Oleksiy Lyutakov, Petr Slepicka, 2014

机译：用KrF准分子激光辐照在掺杂的聚甲基丙烯酸甲酯薄膜上制备周期性表面结构
7. Insoluble surface residues studies on chemically amplified positive resist for KrF excimer laser lithography. [O] . SHIGEYASU MORI, TAKASHI FUKUSHIMA, TAKASHI SUGIHARA, 1993

机译：不溶性表面残留物研究KRF准分子激光光刻的化学扩增阳性抗蚀剂。
8. Wet-Developed Bilayer Resists for 193-nm Excimer Laser Lithography [R] . Kunz, R. R., Horn, M. W., Bianconi, P. A., 1992

机译：湿法开发的双层抗蚀剂，用于193纳米准分子激光光刻

A New Positive Resist Based on Poly(4-Hydroxystyrene) for KrF Excimer Laser Lithography

摘要

著录项

相似文献

相关主题

期刊订阅