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Thermopower detection of single nanowire using a MEMS device

机译:使用MEMS器件检测单根纳米线的热功率

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摘要

We present a MEMS-based device on a silicon nitride membrane in order to measure the thermoelectric properties of a single nanowire. A temperature gradient along a nanowire was generated by a nanoheater, and the temperature was measured by Pt thermometers. A thermal simulation using a finite element method was conducted to analyze the temperature distribution over the MEMS device. The validity of the MEMS device was established by testing the Pt nanowires which had different symmetry configurations. From the test results of Pt nanowires, a convincing temperature calibration method was proposed and applied to an actual case of Bi_2Te_3 nanowire. We measured a Seebeck coefficient of -53 μV/K and electrical conductivity of 2.23 × 10~5 S/m for a single Bi_2Te_3 nanowire with a diameter of 70 nm at 300 K. Our solid design for thermoelectric measurements based on a membrane structure enables the fast and high-yield characterization of one-dimensional nanostructures.
机译:我们在氮化硅膜上提出了一种基于MEMS的设备,以测量单个纳米线的热电性能。通过纳米加热器产生沿着纳米线的温度梯度,并且通过Pt温度计测量温度。进行了使用有限元方法的热仿真,以分析MEMS器件上的温度分布。通过测试具有不同对称配置的Pt纳米线,可以确定MEMS器件的有效性。从铂纳米线的测试结果出发,提出了一种令人信服的温度校准方法,并将其应用于Bi_2Te_3纳米线的实际情况。对于300 K时直径为70 nm的Bi_2Te_3纳米线,我们测得的塞贝克系数为-53μV/ K,电导率为2.23×10〜5 S / m。我们基于膜结构的热电测量固体设计能够实现一维纳米结构的快速和高产率表征。

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