METHOD FOR MANUFACTURING SINGLE-GRAINED NANOWIRE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE EMPLOYING SAME SINGLE-GRAINED NANOWIRE

摘要

Disclosed is a method for manufacturing a semiconductor device employing a semiconductor nanowire. The semiconductor manufacturing method leads to the formation of a single-grained semiconductor nanowire extended laterally on a substrate by performing: a step of forming, on the substrate, a semiconductor nanowire extended laterally in parallel with the substrate; a step of forming a cover layer to cover the semiconductor nanowire; a step of pattering the cover layer to form a trench, which exposes one end of the semiconductor nanowire through an inner wall thereof; a step of forming a catalytic material layer in contact with an end portion of the semiconductor nanowire; and metal induced crystallization (MIC) through thermal treatment.