Laser enhanced mobility in wide band gap semiconductor crystals

摘要

Laser enhanced mobility in the case of PbI _2 single crystal has been investigated on the basis of the experimental results of photoconductivity measurements using high power Nd:YAG laser. Its dependence on energy area density/photon density and charge carrier concentration has been studied. The obtained results of PbI _2 have been compared with that of CdI _2 and ZnS crystals studied under similar experimental conditions. The laser enhanced mobility has also been compared with the theoretical study in the case of GaAs crystal using CO _2 laser.