Glancing angle reactive pulsed laser deposition (GRPLD) for Bi_2O_3/Si heterostructure

摘要

Thin films of micro bismuth oxide particles were successfully prepared by in situ oxidation of the laser ablated bismuth metal. (111) oriented p-type crystalline silicon substrates were used. The effects of substrate tiled angle on the characteristics of the prepared film were studied. Also, the performance of n-Bi_2O_3/p-Si heterojunction device was investigated. The obtained current-voltage characteristics in dark and under illumination insure the dependence of the fabricated device characteristic on the deposition angle. The I-V characteristics show that all prepared devices are of abrupt type.