Anomalous dispersion via coherent field in an InGaN/GaN quantum dot nanostructure

摘要

The dispersion behaviors of weak probe light in an InGaN/GaN quantum dot (QD) nanostructure driven by a coherent coupling field is investigated. InGaN/GaN QD nanostructure is designed numerically by solving the Schrodinger-Poisson coupled equations. By specific values of QD radius, an appropriate four-level QD nanostructure which is suitable for interaction by a weak probe light and a coherent coupling field is designed. It is shown that switching from normal to anomalous dispersion can be achieved by the intensity of coupling field. Therefore, fast light propagation in this model can be obtained by reduced absorption.