Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum WellsExperimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells

摘要

The polarization-related electric field in semipolar {1122} InGaN/GaN quantum wells (QWs) is investigated. Experimentally, the direction and magnitude of the electric field are determined by bias-dependent photoluminescence. Using both (1122) and the reverse (1122) QWs enables the electric field direction, which indicates that the polarization direction flips between the polar (0001) plane and semipolar (1122) plane, to be reliably determined. Lattice distortion due to lattice mismatch, which is the origin of the polarization effect, is theoretically assessed by the valence force field model, and the analysis supports the experimental result.