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机译:半极性InGaN / GaN单量子阱中存在极化场交叉的明确证据
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA;
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA;
Department of Materials and Department of Electrical and Computer Engineering,University of California, Santa Barbara, California 93106, USA;
Department of Materials and Department of Electrical and Computer Engineering,University of California, Santa Barbara, California 93106, USA;
Department of Materials and Department of Electrical and Computer Engineering,University of California, Santa Barbara, California 93106, USA;
Department of Materials and Department of Electrical and Computer Engineering,University of California, Santa Barbara, California 93106, USA;
Department of Materials and Department of Electrical and Computer Engineering,University of California, Santa Barbara, California 93106, USA;
机译:半极性InGaN / GaN量子阱中极化场方向的实验和理论考虑半球形InGaN / GaN量子阱中极化场方向的实验和理论考虑
机译:使用电反射中的Franz-Keldysh振荡确定半极性(1122)InGaN / GaN单量子阱中的极化场
机译:使用交叉条纹图案的GaN微面上的半极性InGaN / GaN多量子阱的选择性区域外延
机译:不同应变条件下半极性InGaN / GaN量子阱的发光偏振特性研究
机译:极性InGaN / GaN量子阱结构的光学研究
机译:在室温下通过极化电场有效控制InGaN / GaN量子阱中的自旋动力学
机译:应变在半极性InGaN / GaN量子阱中极化转换中的作用