Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence-band parameters in InGaN alloy material

摘要

In order to make a precise determination of InGaN material parameters (valence-band A parameters and deformation potentials), reported experimental data on polarization properties have been analyzed by the k center dot p perturbation theory, in which we utilized fact that the polarization properties are sensitive to the material parameters. It is found that the polarization properties are largely affected by the deformation potentials while the valence-band A parameters have small effects. In addition, it is found that two deformation potentials' sets roughly fit with the reported experimental data. From the calculation using these two parameters' sets, it is predicted that low-angle semipolar substrate orientation (theta=30 degrees-40 degrees) are promising for low-cost and high-performance green laser diodes with cleaved facet cavity mirrors. These results support our previous prediction based on analytical calculations.