Ga{sub}0.51In{sub}0.49P/ln{sub}xGa{sub}(1_x)As/GaAs DOPED-CHANNEL FETs (DCFETs) AND THEIR APPLICATIONS ON MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMICs)

摘要

In this paper, lattice-matched Ga{sub}0.51In{sub}0.49 P/GaAs and strained Ga{sub}0.51In{sub}0.49P/In{sub}0.2Ga{sub}(0.8) As doped-channel FETs (DCFETs) were investigated in terms of DC and. microwave performances, including frequency response, noise figure, power-added efficiency (PAE), and output power. In addition, small-signal and large-signal models were created for designing monolithic microwave integrated circuits (MMICs). The heterostructures were both grown by gas-source molecular beam epitaxy (GSMBE) on semi-insulating (100) GaAs substrates. In situ reflection high-energy electron diffraction (KHEED) was used to calibrate the growth rate of InP and GaP. Because of the high etching selectivity between Ga{sub}0.51In{sub}0.49P and In{sub}0.2Ga{sub}0.8As/GaAs, the uniformity of the measured electrical properties of our fabricated, devices is quite satisfying, which indicates that these Ga{sub}0.51In{sub}0.49P/In{sub}xGa{sub}(1-x) structures are very suitable for mass production.