Selective In-Situ Atomic Layer Deposition on Structures Created with EBID

摘要

High purity platinum structures have been grown with atomic layer deposition (ALD) on very thin seeds made with electron beam induced deposition (EBID). The ALD growth is selective towards the EBID seeds on the substrate. This approach basically combines the sub-10 nm patterning capability of EBID and the material quality of ALD, and thereby enables the fabrication of high-quality nanostructures with a high lateral resolution. A dual supply line with local injectors can be used to realize ALD growth in the same tool that is used to create the platinum seed layer. Future developments may result in further optimization of the current process as well as in exploration of other material combinations for both the seed layer and the ALD process.