Long-term stability of Ag and Cu thin films on glass, LTCC and alumina substrates

摘要

Silver (Ag) and copper (Cu) are regarded as advanced material for metallization systems in microelectronic devices because of their high electrical conductivity and enhanced electromigration resistance. Typically, organic circuit boards as well as ceramic and glass-ceramic substrates use galvanic deposited Cu films or screen-printed metallization for this purpose. When applying the latter approach, however, the lateral resolution in the μm-region being required e.g. for novel high frequency applications can not be guaranteed. Hence, sputter deposition is envisaged for the realization of thin film metallization systems. The reliability of 300 nm thick Cu and Ag thin films is comparatively investigated under accelerated aging conditions, utilizing a test structure which consists of parallel lines stressed with current densities up to 2.5 × 10~6 A cm~(-2) at temperatures up to 300℃ on Si/SiO_2, glass, LTCC (low temperature co-fired ceramics) and alumina substrates. To detect the degradation via the temporal characteristics of the current signal a constant voltage is applied according to the overall resistance of the test structure. Knowing the mean time to failure (MTF) and the activation energy at elevated temperatures conclusions on the migration mechanism can be drawn. Whereas on LTCC substrates the activation energy E_a is about 0.75 eV for both Ag and Cu thin films, the higher activation energies of about E_a ～ 1 eV measured for Cu on glass and alumina indicate a suppression of back diffusion especially at enhanced temperature levels. This effect is predominantly caused by a stable oxide layer which is formed at high temperatures and which acts as passivation layer. Therefore, the overall electromigration resistance is lower compared to Ag.