Releasing high aspect ratio SU-8 microstructures using AZ photoresist as a sacrificial layer on metallized Si substrates

摘要

This paper presents a successful method for releasing high aspect ratio SU-8 micro-structures by the use of positive photoresist (AZ 4620) as sacrificial layer. The AZ 4620 photoresist sacrificial layer was dissolved by the SU-8 developer (propylene glycol monomethyl ether acetate). Thus, this process reduces the need for complex microfabrication steps and equipments which are otherwise required in traditional methods using metal sacrificial layers. The current method is both cost-effective and time-effective because no additional releasing method or material is needed to remove the fabricated SU-8 structures. Further, the influence of surface energy on the adhesion between Si and SU-8 was demonstrated and metallic thin layer coating on Si was employed to further reduce the liftoff duration. The results obtained showed that the duration for lift-off of SU-8 structures from metal (Al) coated Si substrate is much lower (approximately 90% time saving) and the surface morphology of the released structures has lesser micropore concentration compared to the process employing bare Si as the substrate. In both processes AZ 4620 was the sacrificial layer whereas the metalized Si substrate could be re-used.