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Sacrificial Layer Technique for Releasing Metallized Multilayer SU-8 Devices

机译:用于释放金属化多层SU-8器件的牺牲层技术

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摘要

The low fabrication cost of SU-8-based devices has opened the fields of point-of-care devices (POC), µTAS and Lab-on-Chip technologies, which call for cheap and disposable devices. Often this translates to free-standing, suspended devices and a reusable carrier wafer. This necessitates a sacrificial layer to release the devices from the substrates. Both inorganic (metals and oxides) and organic materials (polymers) have been used as sacrificial materials, but they fall short for fabrication and releasing multilayer SU-8 devices. We propose photoresist AZ 15nXT (MicroChemicals GmbH, Ulm, Germany) to be used as a sacrificial layer. AZ 15nXT is stable during SU-8 processing, making it suitable for fabricating free-standing multilayer devices. We show two methods for cross-linking AZ 15nXT for stable sacrificial layers and three routes for sacrificial release of the multilayer SU-8 devices. We demonstrate the capability of our release processes by fabrication of a three-layer free-standing microfluidic electrospray ionization (ESI) chip and a free-standing multilayer device with electrodes in a microchannel.
机译:SU-8基设备的低制造成本开启了护理点装置(POC),μTAS和片上技术的领域,该技术呼吁便宜和一次性设备。这通常转化为独立式,悬挂设备和可重复使用的载体晶片。这需要牺牲层以释放来自基板的装置。无机(金属和氧化物)和有机材料(聚合物)都被用作牺牲材料,但它们的制造和释放多层SU-8装置缺少。我们提出了光致抗蚀剂AZ 15nxt(Microchemicals GmbH,Ulm,德国)用作牺牲层。 AZ 15nxt在SU-8处理过程中是稳定的,这适用于制造独立式多层器件。我们展示了两种用于交联AZ 15nxt的两种方法,以实现稳定的牺牲层和多层SU-8装置的牺牲释放的三个路线。我们通过在微通道中制造三层独立的微流体电喷雾电离(ESI)芯片和独立式多层器件来展示我们的释放过程的能力。

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