Formation of CIGS Thin Absorption Layer by Sequential Sputtering of CuGa/In/CuGa Precursor on Mo/SLG with Post Selenization

摘要

Precursor structures of CuGa/In/CuGa stacking layers were prepared on Mo/soda-lime glass by sequential sputtering using intermetallic CuGa and metal In targets, with post selenization by Se evaporation at substrate temperature 500 °C. The selenized CIGS thin films were characterized by X-ray photo electron spec-troscopy, X-ray diffraction, energy dispersive spectroscopy. Field emission scanning electron microscopy (FE-SEM), and Photoluminescence (PL). XPS survey spectra show that the constituent elements such as Cu, Ga, In, and Se appeared on the surface composition with corresponding photoelectron lines and a detailed study of the Se 3d signal in the CIGS absorption layer was discussed. The X-ray diffractograms of the CIGS films exhibited peaks revealing that the films are crystalline in nature with tetragonal chal-copyrite structure. FESEM images reveal that CIGS thin films yield granular nanostructure and a Mo back contact with a columnar structure. The CIGS thin films demonstrated intense near-band-edge PL and free-to-bound transitions were found and reported.