Method for manufacturing CIGS Thin Film Using Non-selenization Sputtering Process with CuSe2 Target

摘要

The present invention relates to a CIGS thin film manufacturing method using a non-selenized sputtering process targeting CuSe2, and a method for fabricating a CIGS thin film by performing sputtering deposition using a CuSe2 target. According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: (a) performing pre-sputtering on a CuSe2 target provided on a substrate; (b) performing RF magnetron sputtering; And (c) in order to create a Ga / In / CuSe ₂ multi-layer stack structure, an indium (In) and gallium (Ga) target by performing an RF sputter deposition over the thin film CuSe2; .