METHOD FOR MANUFACTURING CIGS THIN FILM USING NON-SELENIZATION SPUTTERING PROCESS WITH CUSE2 TARGET

摘要

The present invention relates to a method for manufacturing a CIGS thin film using a non-selenization sputtering process with a CuSe2 target. The purpose of the present invention is to provide a method for manufacturing a CIGS thin film by performing a sputtering deposition process with a CuSe2 target. To achieve the purpose, the present invention includes (a) a step of performing a free sputtering process on a CuSe2 target prepared on a substrate; (b) a step of performing an RF magnetron sputtering process; and (c) a step of depositing an In and Ga target on the CuSe2 thin film by performing an RF sputtering process to generate a Ga/In/CuSe2 multilayer stack structure.