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A facile one-step synthesis of p-CuO-ZnO nanowire heterojunctions by thermal oxidation route

机译:通过热氧化途径轻松地一步合成p-CuO / n-ZnO纳米线异质结

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p-CuO-ZnO nanowire heterojunctions have been successfully synthesized by facile one-step thermal oxidation copper and zinc sheets at 500 degrees C for 4 h in atmosphere. Scanning electron microscopy (SEM) studies indicate p-CuO and n-ZnO nanowires appear respectively well vertical arrays. X-ray diffraction (XRD) results show p-CuO and n-ZnO nanowires present very narrow sharp peaks which suggest that two nanowires are highly crystalline. Current-voltage (I-V) characteristic of p-CuO-ZnO nanowire heterojunctions has been investigated, and I-V curve exhibits a distinct diode-like rectifying behavior. Its simplicity of synthesis and low cost may make the p-CuO-ZnO nanowire heterojunctions suitable for applications in many fields. (C) 2015 Elsevier Ltd. All rights reserved.
机译:p-CuO / n-ZnO纳米线异质结已通过在大气中于500摄氏度下容易地一步热氧化铜和锌片4小时而成功合成。扫描电子显微镜(SEM)研究表明,p-CuO和n-ZnO纳米线分别以良好的垂直排列出现。 X射线衍射(XRD)结果表明,p-CuO和n-ZnO纳米线存在非常窄的尖峰,这表明两条纳米线是高度结晶的。研究了p-CuO / n-ZnO纳米线异质结的电流-电压(I-V)特性,并且I-V曲线显示出独特的二极管状整流行为。其合成的简单性和低成本可以使p-CuO / n-ZnO纳米线异质结适用于许多领域。 (C)2015 Elsevier Ltd.保留所有权利。

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