Seeded growth of GaN at high N_2 pressure on (0001) polar surfaces of GaN single crystalline substrates

摘要

GaN single crystals obtained by the high nitrogen pressure solution method without an intentional seeding, show strong growth anisotropy which results in their platelet shape. The attempts to enhance the growth into (0001) directions by the increase of the integral supercooling in the solution, often lead to the growth instabilities on both Ga-polar and N-polar (0001) surfaces. This can be avoided only by the precise control of the growth conditions at the crystallization front on the particular surface. The results of the seeded growth on both Ga- and N-polar (0001) surfaces in configuration enabling such a control is reported. It is shown that dominating mechanisms of the unstable growth such as the cellular growth or edge nucleation can be suppressed. Differences in nucleation and growth in dependence on surface polarity are discussed.