The study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

摘要

This work deals with the numerical application of the Space Charge Limited Currents (SCLC) phenomenon on n+in+ structures of amorphous silicon. The aim was to develop a framework to validate, through the j-v characteristic, density of states (DOS) profile corresponding to a genuine effect of disorder in this kind of material. This work permitted to get an insight into the phenomenon involved in its different aspects, therefore, to state a generalised treatment and recognise different j-v characteristics from a variety of DOS functions. (C) 2004 Elsevier Ltd. All rights reserved.