The development of Ti silicide on poly gate structures with oxidized sidewall and application in a novel RF LDMOSFET

摘要

A novel gate structure is proposed with oxidized sidewall and Ti polycide on top for application in RF LDMOS devices. The fabrication process of the Ti polycide was reported in connection with the gate length and dry etch conditions of SiN covered on poly gate. The gate length dependence of the Ti polycide process in the RF LDMOS devices has improved device performance with higher cutoff frequency and higher RF amplification gain.