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A TEM Kikuchi pattern study of ECAP AA1200 via routes A, C, B_C

机译:通过路线A,C,B_C对ECAP AA1200进行TEM菊池模式研究

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Shear plastic deformation in ECAP occurs through the formation, movement and storage of dislocations. The differences which exist between shearing characteristics lead to important implications concerning the optimum processing route. It is known that the effectiveness of cell evolution into an array of high-angle boundaries (HABs) is in the order B_C>C>A, or A>B_C>C, depending on the two-channel-angle intersection of the ECAP die. In route A, large portions of HABs are continuously and progressively generated, while routes C and B_C cause fully redundant deformation at each 2n passes, and each 4n passes, respectively. This study is focused on dislocation generation, storage and recombination during ECAP for routes A, C and B_C. Kikuchi bands identified with TEM were used to quantitatively measure the cell and grain boundary misorientation. ECAP was performed on an AA1200 commercially pure aluminium alloy up to 6 = 8.64. A different hierarchy for HAB generation efficiency was found. Thermal stability was studied by annealing the alloy at 0.5,0.6,0.7 T_M (where T_M is the alloy melting point) for 2 h after the severe plastic deformation. It appeared that, even if route B_C involves the fastest microstructure grain refining, route C is likely to be the most stable upon reheating.
机译:ECAP的剪切塑性变形是通过位错的形成,运动和存储而发生的。剪切特性之间存在的差异导致有关最佳加工路线的重要启示。众所周知,根据ECAP芯片的两个通道角交点,细胞进化成高角度边界(HAB)阵列的有效性按B_C> C> A或A> B_C> C的顺序排列。 。在路线A中,大部分HAB连续不断地生成,而路线C和B_C分别在每2n次通过和每4n次通过引起完全冗余的变形。这项研究的重点是ECAP期间路线A,C和B_C的位错产生,存储和重组。用TEM鉴定的菊池带用于定量测量细胞和晶界取向错误。 ECAP是在AA1200商业纯铝合金上进行的,最高可达6 = 8.64。发现了不同的HAB生成效率层次结构。通过在严重塑性变形后在0.5、0.6、0.7 T_M(其中T_M是合金熔点)下对合金退火2 h,研究了热稳定性。看来,即使路线B_C涉及最快的显微组织晶粒细化,路线C在再加热时也可能是最稳定的。

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