Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating

摘要

Copper electroplating has been used for making interconnections in large-scale integration (LSI). Sub-100-nm-wide, deep trenches with aspect-ratios over 6 were fully filled by optimizing DC and pulse electroplating processes. Grain sizes of Cu of sub-100-nm wide trenches after-electroplating were 70 nm for DC electroplating and 58 nm for pulse electroplating. The Cu grain sizes of Cu interconnects by DC plating after electroplating increased with the annealing temperature.