Method for manufacturing semiconductor component e.g. high voltage component, involves filling insulating material in narrow trench aperture, and forming electrical conductive guard material in spread trench aperture

摘要

A spread trench aperture and a narrow trench aperture are formed on a top face of a semiconductor substrate (1). An electrical isolating insulating material such as polysilicon is applied on the top surface (10) of the substrate to fill the narrow trench aperture. An electrical conductive guard material doped with polysilicon is formed in the spread trench aperture. An independent claim is included for semiconductor component.