Method for manufacturing substrate for power semiconductor component e.g. MOSFET for power converter, involves arranging electroplating ridges in recesses formed in bottom metallization layer of insulating material portion

摘要

The method involves providing an electrically non-conductive insulating material portion (1) and applying top and bottom metallization layers (2a,2b) on the top and bottom sides of the insulating material portion. An electrically non-conductive coating layer (3) is formed on the bottom metallization layer. Several recesses (13) are formed in the coating layer. The electroplating ridges (6) are arranged in the recesses formed in the bottom metallization layer. Independent claims are included for the following: (1) method for manufacturing power semiconductor module; (2) substrate for power semiconductor component; and (3) power semiconductor module.